| PART |
Description |
Maker |
| NTE192 NTE193A NTE192A NTE193 |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO92HS
Silicon Complementary Transistors Audio Power Output
|
NTE[NTE Electronics]
|
| DDTD114GU-7-F DDTD133HU-7-F DDTD113EU DDTD113ZU DD |
Prebiased Transistors
500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3
NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
Diodes Inc.
|
| PDTD123YT215 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| PDTD113E PDTD113EK PDTD113ES PDTD113ET PDTD113E-15 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
|
NXP Semiconductors
|
| PDTB123YT PDTB123Y PDTB123YK PDTB123YS |
PNP 500 mA, 50 V resistor-equipped transistors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PDTB113E PDTB113EK PDTB113ES PDTB113ET |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k楼?, R2 = 1 k楼?
|
NXP Semiconductors
|
| BC807-25QA BC807-40QA |
45 V, 500 mA PNP general-purpose transistors
|
NXP Semiconductors
|
| PDTB123E PDTB123EK PDTB123ES PDTB123ET |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼?
|
NXP Semiconductors
|
|
